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SemiWell Semiconductor
MCK100-8
Symbol
3. Gate

Sensitive Gate Silicon Controlled Rectifiers
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 0.8 A ) Low On-State Voltage (1.2V(Typ.)@ ITM)
1 2 3
2. Anode
1. Cathode
SOT- 89
General Description
Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits.
Absolute Maximum Ratings
Symbol
VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG
( TJ = 25C unless otherwise specified ) Condition Ratings
600 Half Sine Wave : TC = 112 C All Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms TA =25C, Pulse Width 1.0 TA =25C, t = 8.3ms 0.5 0.8 10 0.415 2 0.1 1 5.0 - 40 ~ 125 - 40 ~ 150
Parameter
Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature
Units
V A A A A2 s W W A V C C
Apr, 2003. Rev. 0
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
MCK100-8
Electrical Characteristics
Symbol Items
( TC = 25 C unless otherwise noted )
Conditions
VAK = VDRM or VRRM ; RGK = 1000 TC = 25 C TC = 125 C ( ITM = 1 A, Peak ) VAK = 6 V, RL=100
Ratings Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State Current Peak On-State Voltage (1)

1.2
10 200 1.7
VTM
V
IGT
Gate Trigger Current (2)
TC = 25 C TC = - 40 C VD = 7 V, RL=100

200 500
VGT
Gate Trigger Voltage (2)
TC = 25 C TC = - 40 C VAK = 12 V, RL=100 VD = 0.67 VDRM , Exponential waveform, TJ=125C ITM = 2A ; Ig = 10mA VAK = 12 V, Gate Open Initiating Curent = 50mA TC = 25 C TC = - 40 C Junction to case Junction to Ambient RGK = 1000 TC = 125 C
0.2

0.8 1.2
V
VGD
Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage Critical Rate of Rise On-State Current
V
dv/dt
500
800
V/
di/dt
50
A/
IH
Holding Current

2
5.0 10 15 125
mA
Rth(j-c) Rth(j-a)
Thermal Impedance Thermal Impedance
C/W C/W
Notes : 1. Pulse Width 1.0 ms , Duty cycle 1% 2. Does not include RGK in measurement.
2/5
MCK100-8
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
160
Max. Allowable Case Temperature [ C]
10
1
o
140
VGM(5V) PGM(2W)
= 180
120 100 80
o
Gate Voltage [V]
PG(AV)(0.1W) IGM(1A)
10
0
60 40 20 0 0.0
2
25 C
o
360
VGD(0.2V)
10
-1
: Conduction Angl e
10
0
10
1
10
2
10
3
10
4
0.1
0.2
0.3
0.4
0.5
0.6
Gate Current [mA]
Average On-State Current [A]
Fig 3. Typical Forward Voltage
10
10
2
Fig 4. Thermal Response
Transient Thermal Impedance [ C/W]
On-State Current [A]
o
1 125 C
o
10
1
R (J-C)
25 C
o
0.1 0.5
1.0
1.5
2.0
2.5
3.0
10
0
10
-2
10
-1
10
0
10
1
10
2
10
3
On-State Voltage [V]
Time (sec)
Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature
10
10
Fig 6. Typical Gate Trigger Current vs. Junction Temperature
VGT(toC) VGT(25oC)
1
0.1 -50
IGT(25 C)
IGT(t C)
o
o
1
0
50
100
o
150
0.1 -50
0
50
100
o
150
Junction Temperature[ C]
Junction Temperature[ C]
3/5
MCK100-8
Fig 7. Typical Holding Current
10
0.7 = 180
o
Fig 8. Power Dissipation
Max. Average Power Dissipation [W]
0.6 = 90 0.5 = 30 0.4
o
= 120
o
o
= 60
o
IH(25oC)
IH(t C)
1
o
0.3
0.2
0.1
0.1 -50
0
50
100
o
150
0.0 0.0
0.1
0.2
0.3
0.4
0.5
0.6
Junction Temperature[ C]
Average On-State Current [A]
4/5
MCK100-8
SOT- 89 Package Dimension mm Typ. Inch Typ.
Dim. A B B1 C C1 D D1 E e e1 H L R
Min. 1.40 0.36 0.32 0.35 0.35 4.40 1.40 2.30 2.90 3.94 0.90
Max. 1.60 0.56 0.52 0.44 0.44 4.60 1.80 2.60 3.10 4.25 1.10
Min. 0.055 0.014 0.013 0.014 0.014 0.173 0.055 0.091 0.114 0.155 0.035
Max. 0.063 0.022 0.020 0.017 0.017 0.181 0.071 0.102 0.122 0.167 0.043
1.50
0.060
0.25
0.010
1
2
3
1. Cathode 2. Anode 3. Gate
5/5

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